218410.KQ KOE

Founded in 1999 and based in Anyang-si, South Korea, RFHIC Corporation develops and manufactures advanced radio frequency (RF) and microwave components. These products are supplied globally to diverse sectors, including wireless communication infrastructure, radar systems for both commercial and defense purposes, and industrial, scientific, and medical (ISM) industries. The company's offerings encompass RF power transistors, specifically gallium nitride (GaN) on silicon carbide (SiC) varieties, alongside GaN and gallium arsenide (GaAs) monolithic microwave integrated circuits (MMICs) and active dividers. They also provide various power amplifiers, such as hybrid, pallet, wideband, module, and low noise amplifiers, including specialized GaN transmit/receive (T/R) modules. Furthermore, RFHIC produces sophisticated sub-systems like RF/microwave generators, RF transmitters, and high-power combiners. These essential components support a broad array of applications. In telecommunications, they are crucial for 4G LTE, 5G, Wi-Fi, point-to-point radio, and satellite communications (SatCom). For RF energy, their technology is used in microwave heating and drying, particle accelerators, plasma lighting, semiconductor manufacturing, waste gasification, advanced material processing (carbon fiber and composites), microwave-assisted X-ray lasers, microwave tumor ablation, and bio/health sciences. Within defense, RFHIC's products are vital for radar, military communications (milcom), electronic warfare, and satellite communications/very small aperture terminals (SatCom/VSAT).